In this paper we present a new procedure to determine model parameters for nanocrystalline TFTs. The method is based on a previous method developed by our group, to extract model parameters of a-Si:H and polysilicon TFTs. The, method allows the extraction of the model parameters in the three regions previously observed for nanocrystalline devices, that is, in the subthreshold region and in the two above-threshold regions. These parameters are extracted in a simple and direct way from the experimental measurements, with no need of assigning predetermined values to any other model parameter or using optimization methods. The validity of the procedure is tested for nanocrystalline TFTs, showing a good coincidence between transfer, transconductance and output characteristics calculated using parameter values obtained with our extraction procedure and experimental curves. The proposed method is suitable to be used with circuit simulators such as AIMSpice. (C) 2003 Elsevier Ltd. All rights reserved.