This work demonstrates suitability of FD-SOI devices for low power digital and RIF applications for wireless communication. FD-SOI CMOS offers an approximately 60% power reduction over bulk CMOS while maintaining operation speed. Passive devices for RF applications exhibit excellent Q values. In particular, cross-talk immunity at gigahertz range is superior to the bulk. These are very attractive for mixed signal circuits in the gigahertz era. (C) 2004 Elsevier Ltd. All rights reserved.