Techniques for fabricating strained Si, SiGe, and Ge on-insulator include SIMOX, Ge condensation and wafer bonding. In this paper, a brief introduction of each method is presented, with a detailed discussion of wafer bonding approaches for strained Si, SiGe, and Ge on-insulator. Wafer bonding with stop layers is found to be the most general approach with the ability to create ultra-thin layers of strained Si, SiGe, and Ge on-insulator with low threading dislocation densities and precise control over layer thickness. (C) 2004 Elsevier Ltd. All rights reserved.