We propose an analytical model that accounts for SRH generation and recombination rates in both the depletion and the neutral regions inherent to the channel of bulk and PD-SOI MOSFETs. Unlike earlier approaches, this model is valid in all modes of operation, from weak to strong inversion and from conduction to saturation and also includes the contribution from the neutral substrate. Moreover, we demonstrate that all the quantities are simply expressed as the product of a normalization factor times a normalized function that only depends on the DC operating point, thus leading to a simple and efficient formulation of SRH rates. Compared with 2D numerical simulations, the model predictions show an excellent agreement for a broad range of trap parameters. Finally, the limit of validity of the present approach is addressed in details. (C) 2004 Elsevier Ltd. All rights reserved.