In this work, we describe a novel SONOS device suitable for future nonvolatile flash memories. Substrate hot-hole injection (HHI) through a bottom oxide is used for write and gate tunneling through a thin top oxide is employed for erase. We present device DC and dynamic characteristics at low voltages ( < 10 V) for SONOS devices with a gate dielectric stack consisting of a 3.8 nm bottom oxide, 1.5 nm nitride and 3.0 nm top oxide. We obtain a reduction in power consumption by 4 orders of magnitude, an improvement in retention by 90%, and an improvement in subthreshold swing by 40% with a novel write/erase technique compared with Substrate HHI for erase and channel hot electron (CHE) injection for write. (C) 2004 Elsevier Ltd. All rights reserved.