Two methods for fabricating on-chip Schottky diode RF detectors are investigated. The first method was using a CMOS compatible fabrication process, and the second was a post-CMOS fabrication process using focused ion beam (FIB) milling and FIB induced deposition. The CMOS fabricated Schottky diode detected RF signals up to 10 GHz in direct injection experiments and in the range of 9.5-19.5 GHz in microwave irradiation experiments. FIB fabricated Schottky diodes detected RF pulses up to 17 GHz in direct injection experiments. (C) 2004 Elsevier Ltd. All rights reserved.