P-channel metal-oxide-semiconductor field-effect-transistors (PMOSFETs) with a Si1-xGex/Si heterostructure channel were fabricated. Peak mobility enhancement of about 41% in Si1-xGex channel PMOSFETs was observed compared to Si channel PMOSFETs. Drive current enhancement of about 17% was achieved for 70 nm channel length (L-G) Si0.9Ge0.1 PMOSFETs with SiO2 gate dielectric. This shows the impact of increased hole mobility even for ultrasmall geometry of MOSFETs and modest Ge mole fractions. Comparable short channel effects were achieved for the buried channel Si1-xGex devices with L-G = 70 nm, by Si cap optimization, compared to the Si channel devices. Drive current enhancement without significant short channel effects (SCE) and leakage current degradation was observed in this work. (C) 2004 Elsevier Ltd. All rights reserved.