Response to "Comment on'Negative Schottky barrier between titanium and n-type Si(001) for low-resistance ohmic contacts" [Solid State Electron. 2004;48 : 335-8]

Tao M; Zhu J

Solid-State Electronics, Vol.48, No.12, 2351-2352, 2004

DOI10.1016/j.sse.2004.06.020 Export Citation

Response to "Comment on'Negative Schottky barrier between titanium and n-type Si(001) for low-resistance ohmic contacts" [Solid State Electron. 2004;48 : 335-8]

Tao M, Zhu J

The measurement of a negative or low Schottky barrier is complicated by several factors, including series resistance. With these factors in mind and additional experimental results, we reaffirm that the barrier height between Ti and Se-passivated n-type Si(001) is negative or nearly negative. (C) 2004 Elsevier Ltd. All rights reserved.