Direct demonstration of the'virtual gate' mechanism for current collapse in AlGaN/GaN HFETs

Wells AM; Uren MJ; Balmer RS; Hilton KP; Martin T; Missous M

Solid-State Electronics, Vol.49, No.2, 279-282, 2005

DOI10.1016/j.sse.2004.10.003 Export Citation

Direct demonstration of the'virtual gate' mechanism for current collapse in AlGaN/GaN HFETs

Wells AM, Uren MJ, Balmer RS, Hilton KP, Martin T, Missous M

Potential probes to the channel of along channel AlGaN/GaN HFET are used to directly measure the increase in resistance of the ungated regions at the source and drain that are responsible for current collapse under pulsed conditions. Silicon nitride passivation is shown to be an effective means of preventing the formation of the 'virtual gate' on the ungated surface. (C) 2004 Elsevier Ltd. All rights reserved.

Keywords:AlGaN;GaN;current collapse;virtual gate;field effect transistors;III-V semiconductors;wide bandgap semiconductors;surface trapping