In this work, we extend the modified shift and ratio method, originally used for extracting the effective channel length in standard short channel MOSFETs, to the extraction of the fin width in FINFET devices. Using devices with different fin widths, the electrical width of the devices can be extracted. The method is adapted in such a way that it takes into account the difference in mobility due to the different crystal orientation of the fin sidewalls and top surface, the width dependence of the threshold voltage and the influence of the increasing source/drain resistance for narrow fin devices. (c) 2005 Elsevier Ltd. All rights reserved.