An analytical model for the carrier density at the accumulation layer of TIGBT (Trench Insulated Gate Transistor) is presented in terms of the aspect ratio with the influence of the depth of the trench gate below the P base taken into account. Based on the model, analytic expressions for the potential drop on the drift region are derived using a linear dependence of the carrier density on the aspect ratio. The analytical results for the forward voltage drop show a good agreement with the numerical simulations using MEDICI. (c) 2005 Elsevier Ltd. All rights reserved.