A comprehensive model for the electron mobility in wurtzite (hexagonal) GaN is developed. A large number of experimental mobility data and the results of Monte Carlo transport simulations reported in the literature have been evaluated and serve as the basis for the model development. The proposed model describes the dependence of the mobility on carrier concentration, temperature, and electric field. Good agreement between the modeled low-field mobility and measured data at both room and elevated temperatures has been obtained. The Monte Carlo results of the high-field transport are correctly reproduced by the model. The model can be easily incorporated into numerical device simulators. (c) 2005 Elsevier Ltd. All rights reserved.