Steady-state and transient characteristics of packaged 6-kV 4H-SiC junction diodes have been investigated in the temperature range T = 300-773 K. Analysis of the forward current-voltage characteristics and reverse current recovery waveforms shows that the lifetime tau of non-equilibrium carriers steadily increases with temperature across the entire temperature interval. The rise in tau and decrease in carrier mobilities and diffusion coefficients with increasing temperature nearly compensate each other as regards their effect on the differential resistance of the diode, R-d. As a result, R-d is virtually temperature independent. The bulk reverse current is governed by carrier generation in the space-charge region via a trap with activation energy of 1.62 eV. The surface leakage current of packaged structures does not exceed 2 x 10(-6) A at T = 773 K and a reverse bias of 300 V. (c) 2005 Elsevier Ltd. All rights reserved.