The dark current density-voltage characteristics of Au/p-ZnPc/p-Si device at different temperatures ranging from 302 to 364 K have been investigated. Results showed a rectification behavior. At low forward bias, the current density was found to limited by the thermionic emission of holes from p-Si over the organic/inorganic barrier in the ZnPc thin film, while at high voltages, space charge limited current mechanism dominated by a single trapping level. Junction parameters such as, built-in potential, V-bi, carrier concentration, N, the width of the depletion layer, W, were obtained from the C-V measurements. The current density-voltage characteristics under light illumination provided by tungsten lamp (200 W/m(2)) gives values of 0.44 V, 31.25 A/m(2), 0.335% and 2.3% for the open circuit voltage, V-proportional to the short circuit current density, J(sc) the fill factor, FF, and conversion efficiency, n, respectively. (c) 2005 Elsevier Ltd. All rights reserved.