Zirconium nitride (ZrN) is presented as a metal gate candidate for future MOSFET components. Low resistivity (70 mu Omega cm) of the ZrN, thin film and n-type work function (4.0 eV) of the ZrNx/SiO2/p-Si MOS capacitor structure are achieved by reactively sputter depositing the ZrN, at low nitrogen gas flows. The resistivity of the ZrN, film is nearly un-affected by RTP annealing up to 600 degrees C whilst the work function increases slightly to 4.2 eV. By depositing the ZrN, at higher nitrogen gas flow, the work function is found to increase to a value of 4.65 eV, closer to mid-gap of Si. Further increase to 4.9 eV occurs after RTP annealing at 600 degrees C, which is almost suitable for pMOS components. At the same time, the resistivity increases to about 300 mu Omega cm. These initial results make ZrN, a promising metal gate in a gate last process, where the thermal budget is kept low. (c) 2005 Elsevier Ltd. All rights reserved.