Using genetic algorithm (GA) and backpropagation neural network (BPNN), computer models of plasma processes were constructed. The GA was applied to optimize five training factors simultaneously. The presented technique was evaluated with plasma etch data, characterized by a statistical experimental design. The etching was conducted in an inductively coupled plasma etch system. The etch outputs to model include aluminum (Al) etch rate, Al selectivity, silica profile angle, and DC bias. GA-BPNN models demonstrated improved predictions of more than 20% for all etch outputs but the DC bias. This indicates that a simultaneous optimization of training factors is more effective in improving the prediction performance of BPNN model than a sequential optimization of individual training factor. Compared to GA-BPNN models constructed in a previous training set, the presented models also yielded a much improved prediction of more than 35% for all etch outputs. The proven improvement indicates that the presented training set is more effective to improve GA-BPNN models. (c) 2005 Elsevier Ltd. All rights reserved.