Solid-State Electronics, Vol.49, No.12, 1961-1964, 2005
Realization of GaAs/AlGaAs quantum-cascade lasers with high average optical power
Quasi-continuous-wave operation of GaAs/AlGaAs quantum-cascade lasers with high average optical power is demonstrated. Double X-ray diffraction has been used to investigate the quality of the epitaxial material. The compositional gradients and the interface quality are controlled effectively. The corrected average power of per facet about 17 mW and temperature tuning coefficient of the gain peak about 0.91 nm/K from 83 K to 140 K is achieved in pulse operation. Best value of threshold current density is less than 3.0 kA/cm(2) at 83 K. (C) 2005 Elsevier Ltd. All rights reserved.
Keywords:X-ray diffraction;molecular beam epitaxy;semiconducting gallium compounds;quantum-cascade lasers (QCLs)