We report an extended analysis of the generation lifetime and surface generation velocity, s(g), measurement on an advanced gate stack with a high-kappa dielectric layer using leakage current characteristics in inversion condition. The proposed technique was examined on a Rut HfO2/SiO2/Si MOS capacitor grown by metal-organic chemical vapour deposition and annealed in forming gas (FGA, 90% N-2 + 10% H,) at temperatures 430 and 5 10 degrees C. It was found that s(geff) decreased with increasing FGA temperature, however, the density of interface traps. D-it, unexpectedly increases after the second cycle of FGA. The results are discussed together with capacitance versus gate voltage measurement. (c) 2005 Elsevier Ltd. All rights reserved.