SiGe films were deposited and in situ doped by RF-magnetron co-sputtering on oxidized and bare silicon wafers. Post-deposition annealing was done in the temperature range from 580 to 950 degrees C. Structural and compositional characterization was performed by XRD, Raman, TEM and XPS analysis. Electrical properties were obtained by four-point probe measurements on SiGe films, and current-voltage measurements on SiGe(p(+))-Si(n) diode structures. Excellent rectifying properties of SiGe-Si diodes were observed, and the conduction current mechanisms at different annealing temperatures were discussed. (c) 2006 Elsevier Ltd. All rights reserved.