A new proposed flash memory with divided p-substrate-line (PBL) in modified NOR-type array is described. The programming method of band-to-band tunneling induced substrate hot electron injection (BBISHE) provides high programming efficiency. Realized in NOR-type array and combining with the channel FN ejection erasure, the cell guarantees fast random access capability. The BBISHE programming flash memory features high programming efficiency, low voltage operation, high-speed and reliability up to 10(4) P/E cycles. (c) 2006 Elsevier Ltd. All rights reserved.