A new semiempirical surface scattering model for electrons in strained Si devices including a quantum correction has been developed and implemented into our FBMC simulator. The strain is assumed to be consistent with pseudomorphic growth on a relaxed SiGe buffer. By introducing a few additional terms into the physical scattering rates which depend on the Ge-content in the SiGe buffer, the new surface scattering model can excellently reproduce low-field inversion layer mobility measurements for a wide range of Ge-content (0-30%) and substrate doping levels (10(16)-5.5 x 10(18) cm(-3)). As a device example, an NMOSFET with 23 nm gate length with and without a strained Si channel has been simulated by the new FBMC model. (c) 2006 Elsevier Ltd. All rights reserved.