CMOS integration of epitaxial Gd2O3 high-k gate dielectrics

Gottlob HDB; Echtermeyer T; Mollenhauer T; Efavi JK; Schmidt M; Wahlbrink T; Lemme MC; Kurz H; Czernohorsky M; Bugiel E; Osten HJ; Fissel A

Solid-State Electronics, Vol.50, No.6, 979-985, 2006

DOI10.1016/j.sse.2006.04.018 Export Citation

CMOS integration of epitaxial Gd2O3 high-k gate dielectrics

Gottlob HDB, Echtermeyer T, Mollenhauer T, Efavi JK, Schmidt M, Wahlbrink T, Lemme MC, Kurz H, Czernohorsky M, Bugiel E, Osten HJ, Fissel A

Epitaxial gadolinium oxide (Gd2O3) high-k dielectrics are investigated with respect to their CMOS compatibility in metal oxide semiconductor (MOS) capacitors and field effect transistors (MOSFETs). MOS capacitors with various gate electrodes are exposed to typical CMOS process steps and evaluated with capacitance voltage (CV) and current voltage (JV) measurements. The effects of high temperature processes on thermal stabilities of channel/dielectric and dielectric/gate electrode interfaces is studied in detail. A feasible CMOS process with epitaxial gate oxides and metal gate electrodes is identified and demonstrated by a fully functional n-MOSFET for the first time. (c) 2006 Elsevier Ltd. All rights reserved.

Keywords:high-k gate dielectric;metal gate electrode;epitaxial gate dielectric;gadolinium oxide (Gd2O3);CMOS integration;silicon on insulator(SOI)