Room temperature lasing of GaAs quantum wire vertical-cavity surface-emitting lasers grown on (775)B GaAs substrates by molecular beam epitaxy

Higuchi Y; Osaki S; Kitada T; Shimomura S; Takasuka Y; Ogura M; Hiyamizu S

Solid-State Electronics, Vol.50, No.6, 1137-1140, 2006

DOI10.1016/j.sse.2006.04.040 Export Citation

Room temperature lasing of GaAs quantum wire vertical-cavity surface-emitting lasers grown on (775)B GaAs substrates by molecular beam epitaxy

Higuchi Y, Osaki S, Kitada T, Shimomura S, Takasuka Y, Ogura M, Hiyamizu S

Self-organized GaAs/(GaAS)(4)(AlAS)(2) quantum wires (QWRs) grown on (7 7 5)B-oriented GaAs substrates by molecular beam epitaxy have been applied to an active region of vertical-cavity surface-emitting lasers (VCSELs). The (775)B GaAs QWR-VCSEL with an aperture diameter of 3 mu m lased at a wavelength of 765 nm with a threshold current of 0.38 mA at room temperature. This is the first demonstration of laser operation of the QWR-VCSEL by current injection. The light output was linearly polarized in the direction parallel to the QWRs due to the optical anisotropy of the self-organized (775)B GaAs QWRs. (c) 2006 Elsevier Ltd. All rights reserved.

Keywords:quantum wire;(775)B;VCSELs;molecular beam epitaxy