In this paper, we report our numerical modeling work for the optimization of the short-channel performance of a multiple-channel FET, wherein center gate is placed at the center of the fin to form a multi-channel. Our theoretical work is based on the solution of the Poisson-Schrodinger equations in a self-consistent manner. The electron density distribution is monitored during the device simulation. The calculated current-voltage (I-V) characteristics obtained from our two-dimensional numerical solver will be compared with experimental data. To suppress the short-channel effects of a nanometer-scale multiple-channel FET, the structural dimensions such as the channel body thickness and the gate length (L-g) were optimized in terms of sub-threshold swing, threshold voltage roll-off, and drain-induce barrier lowering as well as the transconductance. (c) 2006 Elsevier Ltd. All rights reserved.