High speed turn-on reverse conducting 4 kV static induction thyristors based on the buried gate type p-base n-emitter soft contact structure and anti-parallel diodes for solid-state power supplies in high energy accelerators

Shimizu N; Miyoshi M; Tange S; Sekiya T; Ito T; Sakuma T; Sakurai T; Terasawa T; Hatano M; Hotta S; Imanishi Y; Okimoto A; Asai M; Oda O; Nishizawa J

Solid-State Electronics, Vol.50, No.9-10, 1567-1578, 2006

DOI10.1016/j.sse.2006.08.014 Export Citation

High speed turn-on reverse conducting 4 kV static induction thyristors based on the buried gate type p-base n-emitter soft contact structure and anti-parallel diodes for solid-state power supplies in high energy accelerators

Shimizu N, Miyoshi M, Tange S, Sekiya T, Ito T, Sakuma T, Sakurai T, Terasawa T, Hatano M, Hotta S, Imanishi Y, Okimoto A, Asai M, Oda O, Nishizawa J

Buried gate type p-base n-emitter soft contact (PNSC) structure 4 kV static induction thyristors (SIThys) have been fabricated in order to make thyristors for high-speed turn-on applications to such as high energy accelerators. It was found that these static induction thyristors could be fabricated under the test pilot line with a good device production yield. The static characteristics and pulse switching characteristics of these static induction thyristors are examined. Several application examples of the present 4 kV static induction thyristors to power supplies for high energy accelerators are shown. (C) 2006 Elsevier Ltd. All rights reserved.

Keywords:static induction thyristors;high power devices;pulse power devices;solid-state power supplies;high energy accelerators