In this paper, a detailed investigation of the low frequency noise in biaxially strained-Si technology has been conducted. The noise behavior is described and compared with the results obtained on ultrathin oxide MOSFETs in an advanced silicon technology. The drain current noise measurements are interpreted by carrier number fluctuation noise models. The extracted oxide trap density is more important for the studied strained-Si devices. Finally, the important excess noise observed in the longest geometries is attributed to the gate-leakage current noise contribution. (c) 2007 Elsevier Ltd. All rights reserved.