Super barrier rectifier (SBR (TM)) is a majority carrier device that has an adjustable potential barrier under MOS gate. This makes basic principle of SBR operation similar to that of Schottky barrier diode. However, in SBR devices at forward voltages above the P-N junction knee voltage, a peculiar high injection mechanism modulates conductivity. Analytical model predicts that in this regime SBR behaves with diode ideality factor equal to two. The sharp turn on of injection can lead to a negative resistance, which can be avoided by using higher resistivity Epi layer at the top of device structure. The storage time is absent in the transient behavior of SBR, while lifetime control methods are necessary to reduce stored charge and reverse recovery time for high frequency operation. (c) 2007 Elsevier Ltd. All rights reserved.