In this work, physical and electrical characteristics of atomic-layer-deposited HfxZr1-xO2 formed using tetrakis-ethylmethylaminohafnium (TEMAHf), tetrakis-ethylmethylaminozirconium (TEMAZr), and ozone are reported. Confirming Zr addition, film densities decrease with increasing Zr content. A slight increase in interfacial layer thickness is observed for ZrO2 after high-temperature annealing. All films remain smooth and void-free after high-temperature annealing. Tetragonal phase stabilization is observed with increasing Zr content. Carbon impurities are low and independent of Zr content. HfxZr1-xO2 transistors and capacitors are fabricated for electrical characterization. Well-behaved capacitance-voltage characteristics are observed for all devices. Only a slight increase in gate leakage current is observed as Zr content is increased from < 2% (HfO2) to similar to 50% (Hf0.5Zr0.5O2). HfxZr1-xO2 devices have similar to 50 mV lower threshold voltage than HfO2 devices. High field mobilities of HfxZr1-xO2 devices with 50 and 60% Zr content are higher than HfO2 or ZrO2. All these results indicate HfxZr1-xO2 is a promising dielectric for SiO2 replacement. (c) 2007 The Electrochemical Society.