The manipulation of single metallic nanoislands with a precision better than 0.5 nm on a MOS2 surface is demonstrated. Optimizing the metal growth conditions yields triangular- shaped nanoislands of 30 nm in lateral size and 12 nm in height on the MOS2 surface. The manipulation of a single nanoisland was performed using the tip apex of a scanning tunneling microscope. The feedback loop conditions to achieve this manipulation are discussed. Fully planar four-pad nanostructures were constructed, and the apex of each triangular nanoisland of the nanostructure is pointing toward a central 10 X 20 nm(2) MOS2 working area where the surface atomic cleanliness is preserved. (C) 2007 American Vacuum Society.