Highly (100)- and (110)-oriented LaNiO3 (LNO) thin films were successfully prepared on a Si (100) substrate using the chemical solution deposition method. It was somewhat surprising to find that the orientation of LNO films depended on the heating rates of the temperature range of 200 degrees-400 degrees C. The samples with heating rates beyond 10 degrees C/s showed the preferential (100) orientation, while those with heating rates below 6.67 degrees C/s showed the preferential (110) orientation. The orientation mechanism is controlled by the thermodynamics of nucleation and crystal growth. LNO films with controlled orientation having low resistivities of 2 m Omega.cm are a good basis for integrating ferroelectric applications.