The effects of heat-treatment conditions on crystallographic orientation was studied on single layer, 0.14-0.19-mu m-thick Pb(Zr0.53Ti0.47)O-3 (PZT) films deposited on Pt(111)/TiO2/SiO2/Si(100) substrates by spin-coating using a Pb(NO3)(2)-Zr(OC3H7n)(4)-Ti(OC3H7i)(4)-polyvinylpyrrolidone (PVP)-CH3COCH2COCH3-CH3OC2H4OH-n-CH3OH solution. The gel films were fired either by placing the coated substrates on an alumina boat and inserting them into an electric furnace of 500 degrees-900 degrees C, or by placing them on a hot mullite plate of 500 degrees-900 degrees C so that the rear side of the substrate was in contact with the hot plate. When the samples were heated by placing on a hot mullite plate, (001)/(100) orientation of PZT occurred even at firing temperatures as low as 600 degrees C, and the films were more completely oriented than those heated by inserting in a furnace along with an alumina boat. This suggests that either the higher heating rates or the heating from the substrate side would promote the oriented crystallization. However, when the gel films were heated up in a near-infrared (IR) image furnace, preferential (001)/(100) orientation was observed even at low heating rates. The Si(100) substrates generate heat in the image furnace, allowing the gel films to be heated from the substrate side, which was suggested by the fact that the films do not absorb the near-IR light while the substrate does. Therefore it can be concluded that heating the gel films from the substrate side is effective for the orientation of the films, by which orientation is realized even in PZT films derived from PVP-containing alkoxide solutions.