A feasible doping strategy is introduced to synthesize Eu2+-doped alpha-Si3N4 nanowires coated with a thin BN film. The nanowires were characterized by X-ray diffraction, scanning electron microscopy, high-resolution transmission electron microscopy, and a fluorescence spectrophotometer. The Eu2+-doped alpha-Si3N4 nanowires emitted strong yellow light, which is related to the 4f(6)5d-4f(7) transition of Eu2+, upon a broad excitation wavelength range between 250 and 450 nm. The obtained nanowires provided a potential candidate for application in optical nanodevices, as well as in white LEDs.