화학공학소재연구정보센터
Journal of Crystal Growth, Vol.308, No.2, 241-246, 2007
Growth of cubic SiC single crystals by the physical vapor transport technique
Suitable process parameters for the growth of cubic 3C-SiC single crystals via the seeded physical vapor transport (PVT) technique, also known as the modified Lely method, have been determined. Free-standing, 200 mu m thick 3C-SiC epilayers with (0 0 1)- or (0 0 (1) over bar)-face grown on undulant Si (0 0 1) as well as 3C-SiC platelets with [1 1 1]- or [(1) over bar (1) over bar (1) over bar]-orientation grown by thermal decomposition of methyl trichlorosilane in hydrogen were employed as seed crystals. The source material consisted of stoichiometric SiC; in addition, a separate Si source was deposited in the furnace at a temperature of about 1500 degrees C. The temperature of the seed crystals was kept at about 1900 degrees C. Stable growth of 3C-SiC bulk material of high crystalline quality was reached on 3C-SiC seed crystals with (0 0 I)-face providing a low density of planar defects and at near-thermal-equilibrium conditions resulting in a reduction of internal stress and as a consequence in avoiding the generation of new extended crystal defects. The growth rate achieved under these conditions was approximately 0.05 mm/h. The nitrogen donor concentration in the grown 3C-SiC crystals was determined to be equal to (2-6) x 10(18)cm(-3). (C) 2007 Elsevier B.V. All rights reserved.