화학공학소재연구정보센터
Journal of Crystal Growth, Vol.308, No.2, 392-397, 2007
Molecular beam epitaxial growth and characterizations of Co-Mn-Ge Heusler thin films
We report on the growth of Co-Mn-Ge thin films on various substrates using low-temperature molecular beam epitaxy. The magnetic and transport properties of the films were investigated. The close-to-stoichiometric Co2MnGe film grown on GaAs(1 0 0) shows ferromagnetism and exhibits anomalous Hall effects at room temperature. The irreversibility of zero-field-cooled and field-cooled measurements suggests the formation of superparamagnetic clusters. On the other hand, the growth of Co2MnGe films on Ge buffer layer and Si(1 0 0) substrate is found to be unsuitable due to the degraded crystal qualities with weak magnetization signals. (C) 2007 Elsevier B.V. All rights reserved.