We studied a PbxZr1-xTiO3/SnO2/Al(2)O(3)heterostructure as a base for transparent ferroclectric field-effect transistor. Single-crystal SnO2/Al2O3 epitaxial films with the electron mobility of 25 cm(2)/N were grown by pulsed laser deposition using two YAG:Nd lasers. Depletion mode transistor Au/PZT/SnO2/Al2O3 was produced by laser ablation and RF sputtering. All the samples demonstrate clock-wise hysteresis of the source-drain characteristic. The energy distribution of traps at the PZT/SnO, interface was determined using a modified version of a transient current method. The effect of PZT intergrain boundaries on the retention time was taken into account for experimental data discussion. (c) 2007 Elsevier B.V All rights reserved.