This work describes the preparation of titanium nitride (TiN) films on Si (I 11) substrates by atmospheric pressure halide chemical vapor deposition (AP-HCVD). Various TiN films were obtained by exploiting TiCl4 +NH3 gas chemistry with flow ratios [NH3]/[TiCl4] from 0.2 to 1.4, and deposition temperatures (T-d) from 600 to 900 degrees C. When Td = 800 degrees C gold-colored films with electrical resistivities of under 100 mu Omega cm were formed at almost all of the investigated [NH3]/[TiCl4] flow ratios. In particular, a lowest resistivity of about 23.7 mu Omega cm, which is quite close to that of bulk TiN, was achieved using an [NH3]/[TiCl4] flow ratio of 0.3. Atomic force microscopy indicated that the root mean square surface roughness of that film was only about 5.1 nm. Under the same [NH3]/[TiCl4] flow ratio as above, X-ray diffraction analyses revealed the presence of a cubic TiN phase with a preferred orientation of (200) for T-d <= 800 degrees C, while additional (111) and (220) orientations emerged when the film was deposited at 900 degrees C. In conclusion, a low resistivity (< 100 mu Omega cm) TiN film can be formed by AP-HCVD with very low [NH3]/[TiCl4] flow ratios 0.3-1.4. (C) 2007 Elsevier B.V. All rights reserved.