Silicon carbide nanowires (NWs), that were over 200 mu m in length and 20-200 nm in diameter, were prepared by high-pressure reaction from SiBONC powder tablets. Annealing temperatures between 1,500 degrees C and 1,600 degrees C and SUB molar ratios between 70:30 and 60:40 were suitable for the growth of the nanowires. The nanowires were fabricated by in situ chemical vapor growth process on the tablets. The SiC nanowires were identified as single crystal beta-SiC. The analysis of X-ray diffraction (XRD) and transmission electron microscopy (TEM) showed the single crystalline nature of nanowires with a growth direction of < 111 >. Massive growth of single crystalline SiC nanowires is important to meet the requirements of the fabrication of SiC nanowire-based nanodevices.