플라즈마 공중합 MMA-Styrene 박막의 E-beam 레지스트 특성

박종관; 이덕출

Polymer(Korea), Vol.18, No.5, 835-841, September, 1994

Export Citation

플라즈마 공중합 MMA-Styrene 박막의 E-beam 레지스트 특성

E-beam Resist Characteristics of the Plasma Copolymerized MMA-Styrene Thin Films

박종관, 이덕출

초록

정전결합 유동가스형 반응관을 사용해서 methylmethacrylate(MMA)와 methylmethacrylate-styrene(MMA+Sty) 모노머를 중합하여 (PPMMA, PP(MMA+Sty)) positive E-beam 레지스트 박막을 제작하였다. 패턴 형성은 30kV의 가속전압으로 조사량(照射量)을 20∼900μC/cm²로 변화시키면서 행하였고, 현상은 박막 제작시 사용한 반응관에서 Ar가스로 수행하였다. 박막의 성장속도는 박막 제작시 방전전력과 스티렌 첨가량의 증가에 따라 증가하였다. E-beam이 조사되지 않은 부분의 에친속도는 100W 현상 방전전력으로 PPMMA는 440∼820Å/min, PP(MMA+Sty)는 20∼150Å/min 이었으며 비에칭율에 있어서 PPMMA는 PMMA보다 다소 낮은 값은 보였지만 PP(MMA+Sty)는 우수한 에칭특성을 나타내었다.

The plasma polymerized thin films of PPMMA and PP(MMA+Sty) were prepared for the application as a positive E-Beam resist in capacitively coupled gas-flow-type reactor using methylmethacrylate and methylmethacrylate-styrene as monomers. These thin films were patterned by the electron-beam apparatus with an acceleration voltage of 30kV and exposure dose ranging from 20 to 900μC/cm². The growth rates of thin films increased with increasing discharge power and composition of styrene. The etching rate of PPMMA was 440∼820Å4/min, and that of PP(MMA+Sty) was 20∼150Å/min during Ar plasma etching at the discharge power of 100W. In terms of the relative etching rate, PPMMA showed a poor etching charateristics but PP(MMA+Sty) showed better characteristics compared with PMMA.

Keywords:electron-beam resist;plasma polymerization;lithography;thin film

[References]

Curtis BJ, Brunner HR, Ebnoether M, J. Electrochem. Soc., 130, 2242 (1983)
Morita S, Tamano J, Hattori S, Ieda M, J. Appl. Phys., 51, 3983 (1980)
Kim JB, Polym. Sci. Technol., 1(6), 370 (1990)
Lee DC, Proc. of the Spring Symp. of KIEE, pp. 76 ~ 79 (1993)
Montasser K, Hattori S, Thin Solid Films, 117, 311 (1984)
Gokan H, J. Electrochem. Soc., 130(1), 143 (1983)
Kim YM, J. Anal. Sci. Technol., 5(2) (1992)
Morita S, Sawa G, Ieda M, J. Macromol. Sci., A10(3), 501 (1976)
Brown WL, Venkatesan T, Wagner A, Solid State Technol., 24(8), 60 (1981)
Hori H, Yoneda T, Morita S, Hattori S, J. Vac. Sci. Technol. B, 4(2), 500 (1986)

[Referenced By]

[1] Curtis BJ, Brunner HR, Ebnoether M, J. Electrochem. Soc., 130, 2242 (1983)

[2] Morita S, Tamano J, Hattori S, Ieda M, J. Appl. Phys., 51, 3983 (1980)

[3] Kim JB, Polym. Sci. Technol., 1(6), 370 (1990)

[4] Lee DC, Proc. of the Spring Symp. of KIEE, pp. 76 ~ 79 (1993)

[5] Montasser K, Hattori S, Thin Solid Films, 117, 311 (1984)

[6] Gokan H, J. Electrochem. Soc., 130(1), 143 (1983)

[7] Kim YM, J. Anal. Sci. Technol., 5(2) (1992)

[8] Morita S, Sawa G, Ieda M, J. Macromol. Sci., A10(3), 501 (1976)

[9] Brown WL, Venkatesan T, Wagner A, Solid State Technol., 24(8), 60 (1981)

[10] Hori H, Yoneda T, Morita S, Hattori S, J. Vac. Sci. Technol. B, 4(2), 500 (1986)