The effect of bromine methanol (BM) etching and NH4F/H2O2 passivation on the Schottky barrier height between An contact and semi-insulated (SI) p-Cd1-xZnxTe (x approximate to 0.09-0.18) was studied through current-voltage (I-V) and capacitance-voltage (C-V) measurements. Near-infrared (NIR) spectroscopy technique was utilized to determine the Zn concentration. X-ray photoelectron spectroscopy (XPS) for surface composition analysis showed that BM etched sample surface left a Te-0-rich layer, however, which was oxidized to TeO2 and the surface [Te]/([Cd]+[Zn]) ratio restored near-stoichiometry after NH4F/H2O2 passivation. According to I-V measurement, barrier height was 0.80 +/-0.02-0.85 +/- 0.02 eV for Au/p-Cd1-xZnxTe with BM etching, however, it increased to 0.89 +/- 0.02-0.93 +/- 0.02 eV with NH4F/H2O2 passivation. Correspondingly, it was about 1.34 +/- 0.02-1.43 +/- 0.02 eV and 1.41 +/- 0.02-1.51 +/- 0.02 eV by C-V method. (c) 2007 Elsevier B. V. All rights reserved.