Classic molecular dynamics (MD) calculations were performed to investigate the deposition of thin hydrocarbon film. SiC (10 0) surfaces were bombarded with energetic CH3 molecules at impact energies ranging from 50 to 150 eV. The simulated results show that the deposition yield of H atoms decreases with increasing incident energy, which is in good agreement with experiments. During the initial stages, with breaking Si-C bonds in SiC by CH3 impacting, H atoms preferentially reacts with resulting Si to form Si-H bond. The C/H ratio in the grown films increases with increasing incident energy. In the grown films, CH species are dominant. For 50 eV, H-Csp3 bond is dominant. With increasing energy to 200 ev, the atomic density of H-Csp2 bond increases. (c) 2007 Elsevier B.V. All rights reserved.