Hafnium nitride (Hf-N) thin films were deposited on fused silica at different N-2 flow ratio (N-2/N-2 + At) using a reactive DC magnetron sputtering system. A gradual evolution in the composition of the films from Hf3N2, HfN, to higher nitrides was found through X-ray diffraction (XRD). Films of Hf3N2, and HfN show positive temperature coefficients of resistivity, while higher nitride has a negative one. Highly oriented growth of (0 0 1) Hf3N2 and NaCl-structure (10 0) HfN films were fabricated on fused silica substrate at relatively lower temperature of 300 degrees C. The electrical resistivity values of both as-deposited and post-deposition annealed films were measured by a four-point probe method. The obtained minimum resistivity of as-deposited film is 20 mu Omega cm, and this result shows potential application of HfN films as electrode materials in electronic devices. (c) 2007 Elsevier B.V. All rights reserved.