BSb films were deposited onto fused silica substrates by coevaporating B and Sb from appropriate boats. Optical studies indicated an indirect band gap of similar to 0.59eV. The films thus prepared were characterized by measuring X-ray diffraction (XRD), Fourier transform infrared (FTfR) spectroscopy, scanning electron microscopy (SEM), transmission electron microscopy (TEM), and X-ray photoelectron spectroscopy (XPS) studies. XPS studies indicated the ratio of B: Sb similar to 1. XRD indicated the reflections from (101), ( 11), (112), (330), (331) and (323) planes of zinc blende BSb. FTIR spectra indicated the peaks for B-B, B-O, B-Sb vibration modes. A strong peak located at similar to 151cm(-1) for B-Sb modes dominated the Raman spectra. Electrical resistivity was measured for B-Sb films in the temperature range of 100-353 K. Electron transport process was seen to be governed by Mott's hopping when complete temperature dependence of the conductivity is considered. (C) 2007 Elsevier B.V. All rights reserved.