Tin selenide thin films were grown by flash evaporation method at substrate temperatures, T-S = 303-513 K at an interval of 30 K. Single phase, nearly stoichiometric and polycrystalline films with strong (400) orientation exhibiting orthorhombic structure was observed at the substrate temperature of 513K. The optical absorption studies indicated a direct band gap of 1.26eV with high absorption coefficient (> 10(4) cm(-1)) near the fundamental absorption edge. The films were found to have an electrical resistivity 8.1 Omega cm with p-type conduction. (c) 2007 Elsevier B.V. All rights reserved.