A comparative study of the quality and growth kinetics of Ge films grown epitaxially on Si through a reduced-pressure chemical vapor deposition was conducted using GeCl4 and GeH4 as the Ge precursor. The growth rates of Ge films produced both by GeH4 and GeCl4 precursors were nearly constant in the 500-750 degrees C temperature range, indicating that the growth was mass-transport limited. The films produced using the two precursors showed similar crystallinity, however, GeCl4 Ge showed improved surface roughness. GeCl4 also had better growth selectivity on oxide-patterned Si substrates. (c) 2007 The Electrochemical Society.