The authors present results from molecular-dynamics simulations of SiF3 impact on SiC (100) surfaces at normal incidence and over a range of energies of 10, 50, and 150 eV. The surface temperatures are set to 300 K for all energies and 600 K for 150 eV. The uptake of Si atoms is sensitive to the incident energy and temperature, while the uptake of F atoms is not very sensitive to the incident energy and temperature. The simulation results show that the etching yield of Si is higher than that of C. After 30 ML (monolayers) fluence, SiF3 does not etch SiC. The F-containing reaction layer is sensitive to the incident energy. The thickness of the reaction layer increases with the incident energy. In the reaction layer, SiF, SiF2, CF, and CF2 species are dominant. In etch products, atomic F etch products are dominant. Si atoms in SiC are mainly sputtered as SiFx (x= 1-4). C atoms in SiC are sputtered as larger SixCyFz species. (c) 2007 American Vacuum Society.