Suspended single crystal diamond devices, microdisks and beam structures, have been fabricated. Low energy boron ions (180 keV) were implanted to create subsurface damage while maintaining an undamaged top surface; homoepitaxial growth was subsequently carried out on the material. The damaged layer was selectively removed by electrochemical etching. Electrodes were deposited adjacent to the devices to reduce the voltage required for etching and to help control the etch profile. (c) 2007 American Vacuum Society.