The authors report the study of intersubband transitions in ZnCdMgSe-based wide band gap II-VI semiconductors. The samples were prepared by molecular beam epitaxy on InP substrates. Both ZnCdSe/ZnCdMgSe multiple quantum wells and CdSe/ZnCdMgSe quantum dot multilayer stacks were grown. Strong intersubband absorption was observed in the samples. The results show that these materials are very promising for fabricating imersubband devices in the mid- and near-infrared spectral ranges. (c) 2007 American Vacuum Society.