Using geometric models based on one-dimensional transport at spheres and cylinders, three methods for improving the simulation of voltammetric behavior of a disk electrode have been explored. One method is based on the common assumption of equivalency between the limiting currents for a disk and a hemisphere under steady-state diffusion conditions. The second method involves the use of a partial-sphere geometry which is a better approximation that is suitable at the extreme diffusional limits achievable at a disk electrode of fully planar and steady-state transport. The third method, which is generally applicable, is a further refinement that uses a combination of appropriate one-dimensional spherical and cylindrical geometries. The results demonstrate that reasonably accurate approximations of disk behavior for several reaction mechanisms can be achieved in a fraction of the time required to compute the more rigorous two-dimensional model. We propose that the approximation serve primarily as a fast way to explore system behavior and establish approximate values of the relevant parameters. More accurate computations can then be performed using the two-dimensional model.