Bi3.25Eu0.75Ti3O12 (BET) thin films were deposited on the LaNiO3 (LNO (100))/Si and Pt/Ti/SiO2/Si substrates by the metal-organic decomposition method. Structural and dielectric properties of BET thin films for the applications in nonvolatile ferroelectric random access memories were investigated. Both the microstructure and morphology of the films were analyzed by X-ray diffraction and atomic force microscope. Even at low temperature 650 degrees C, the BET thin films were deposited on LNO bottom electrode and exhibited [001] orientation. Compared with the films deposited on Pt electrode, the BET thin films on the LNO electrode annealed at 650 degrees C showed larger dielectric constants and remanent polarization. For the BET thin films on the LNO electrode annealed at 650 degrees C, the remanent polarization 2P(r) and coercive field were 45.6 mu C/cm(2) and 171 kV/cm, respectively. (c) 2007 Published by Elsevier B.V.