TaSi2 nanowires have been synthesized on Si substrate by annealing FeSi2 thin film and NiSi2 films at 950 degrees C in an ambient containing Ta vapor whose length would be grown up to 13 mu m. The metallic TaSi2 nanowires exhibit excellent electrical properties with remarkable high failure current density of 3 x 10(8) A cm(-2). In addition, the growth mechanism is addressed in detail, The TaSi2 nanowires are formed in three steps: segregation of Si atoms from the FeSi2 thin film and NiSi2 films underlayer to form Si base, growth of TaSi2 nanodots on Si base, and elongation of TaSi2 nanowire along the growth direction. This simple approach promises future applications in nanoelectronics and nano-optoelectronics. (c) 2007 Elsevier B.V. All rights reserved.